• DocumentCode
    1098440
  • Title

    GaAlAs p-i-n junction waveguide modulator

  • Author

    Lengyel, G. ; Lengyel, G.

  • Author_Institution
    Univ. of Rhode Island, Kinston, RI, USA
  • Volume
    1
  • Issue
    1
  • fYear
    1983
  • fDate
    3/1/1983 12:00:00 AM
  • Firstpage
    251
  • Lastpage
    255
  • Abstract
    Optical communications systems often require modulating elements which change the intensity, phase, or polarization of the light. A waveguide modulator has been fabricated in the form of a GaAlAs p-i-n heterostrueture grown on the
  • Keywords
    Gallium materials/devices; Optical modulation/demodulation; Optical waveguides; p-i-n diodes; Crystallography; Intensity modulation; Optical fiber polarization; Optical modulation; Optical polarization; Optical waveguides; PIN photodiodes; Transmission line matrix methods; Voltage; Waveguide junctions;
  • fLanguage
    English
  • Journal_Title
    Lightwave Technology, Journal of
  • Publisher
    ieee
  • ISSN
    0733-8724
  • Type

    jour

  • DOI
    10.1109/JLT.1983.1072063
  • Filename
    1072063
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1098440