DocumentCode
109853
Title
Current Conduction Mechanism of Nitrogen-Doped 
RRAM
Author
Wanki Kim ; Sung Il Park ; Zhiping Zhang ; Wong, Simon
Author_Institution
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
Volume
61
Issue
6
fYear
2014
fDate
Jun-14
Firstpage
2158
Lastpage
2163
Abstract
To eliminate the forming process in resistive random access memory (RRAM), we introduced nitrogen into AlOx layer to generate a moderate amount of traps inside the film. The composition of nitrogen-doped AlOx (N-AlOx) RRAM is revealed by X-ray photoelectron spectroscopy and X-ray diffraction analyses. To understand the current conduction mechanism of N-AlOx RRAM, we investigated field and temperature dependence of the charge transport. Based on the extracted trap levels of high-resistance state and various low-resistance states, the current conduction is found to be governed by Frenkel-Poole emission. An energy band model is also proposed to clarify the current conduction mechanism and switching behavior of N-AlOx RRAM.
Keywords
Poole-Frenkel effect; X-ray diffraction; X-ray photoelectron spectra; aluminium compounds; band structure; nitrogen; photoelectron spectroscopy; random-access storage; Frenkel-Poole emission; RRAM; X-ray diffraction analyses; X-ray photoelectron spectroscopy; charge transport; current conduction mechanism; energy band model; extracted trap levels; resistive random access memory; Aluminum; Electrodes; Energy barrier; Nitrogen; Switches; Temperature measurement; X-ray scattering; Conduction of resistive random access memory (RRAM); Frenkel-Poole emission; Frenkel??Poole emission; energy barrier; nitrogen-doped aluminum oxide (N- ${rm AlO}_{x}$ ); nitrogen-doped aluminum oxide (N-AlOₓ); nonvolatile memory; random access memory; resistive switching; switching mechanism of resistive random access memory; switching mechanism of resistive random access memory.;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2014.2319074
Filename
6812123
Link To Document