Title :
3D Quantum Numerical Simulation of Single-Event Transients in Multiple-Gate Nanowire MOSFETs
Author :
Munteanu, D. ; Autran, J.L. ; Ferlet-Cavrois, V. ; Paillet, P. ; Baggio, J. ; Castellani, K.
Author_Institution :
L2MP-CNRS, Marseille
Abstract :
The impact of quantum confinement effects on the transient response of 32 nm multiple-gate nanowire MOSFETs to heavy ion irradiation is investigated using 3D quantum numerical simulation. The drain current transient induced by an ion strike and the bipolar amplification of double-gate, triple-gate, omega-gate and gate-all-around architectures is simulated for the 2007, 2009 and 2011 ITRS Low Power technology nodes. The consequences of quantum-mechanical confinement on single-event transient immunity when devices are scaled down to 20 nm gate length and 5 nm thick silicon channel are then analyzed.
Keywords :
MOSFET; elemental semiconductors; ion beam effects; semiconductor device models; semiconductor quantum wires; silicon; transients; 3D quantum numerical simulation; double-gate architecture; drain current transient; gate length; gate-all-around architecture; heavy ion irradiation; multiple-gate nanowire MOSFETs; omega-gate architecture; quantum confinement effects; quantum-mechanical confinement; silicon channel; single-event transients; size 20 nm; size 32 nm; size 5 nm; triple-gate architecture; Carrier confinement; Electrodes; Electrostatics; MOSFETs; Numerical simulation; Potential well; Quantum mechanics; Semiconductor films; Silicon; Transient response; 3D quantum simulation; Double-Gate (DG); Gate-All-Around (GAA); Multiple-Gate nanowire MOSFET; Omega-Gate ($Omega$-Gate); Triple-Gate (Tri-gate); quantum-mechanical effects;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2007.892284
