DocumentCode :
1098718
Title :
Concurrent Dual-Band Class-F Load Coupling Network for Applications at 1.7 and 2.14 GHz
Author :
Negra, Renato ; Sadeve, Alexandre ; Bensmida, Souheil ; Ghannouchi, Fadhel M.
Author_Institution :
Univ. of Calgary, Calgary
Volume :
55
Issue :
3
fYear :
2008
fDate :
3/1/2008 12:00:00 AM
Firstpage :
259
Lastpage :
263
Abstract :
Highly efficient multiband power amplifiers (PAs) are key elements for the development of future multistandard multiband communication terminals and cognitive radios. This paper reports the design of a multiharmonic dual-band Class-F power amplifier for applications at wireless communication frequencies based on a switchless multiharmonic multiband load coupling network topology. The proposed output network topology is able to precisely synthesize Class-F impedance conditions with up to three harmonics at two distinct nonharmonic frequencies without the need of switches or electronically tunable elements. The proposed topology was used to design a Class-F PA in hybrid technology for the frequency bands at 1.7 and 2.14 GHz. Optimum impedances for maximum efficiency of the used GaAs MESFET for the two bands were determined by multiharmonic load-pull measurements and synthesized by the proposed switchless dual-band Class-F network. With a dual-band input matching network, the fabricated PA achieves 44.0% and 61.3% drain efficiency for an output power of more than 32.8 dbm and 34.4 dbm at 1.7 and 2.14 GHz, respectively. To the best knowledge of the authors, this is the first concurrent multiharmonic dual-band PA reported in open literature.
Keywords :
III-V semiconductors; cognitive radio; coupled circuits; gallium arsenide; harmonic analysis; microwave amplifiers; microwave transistors; power amplifiers; radio networks; switching networks; telecommunication network topology; GaAs; GaAs MESFET; cognitive radios; dual-band class-F load coupling network; efficiency 44 percent to 61.3 percent; frequency 1.7 GHz to 2.14 GHz; multiband power amplifiers; multiharmonic dual-band Class-F power amplifier; multiharmonic load-pull measurements; multistandard communication terminals; optimum impedances; wireless communication frequencies; Class F; GaAs MESFETs; cognitive radio; dual-band power amplifiers; high efficiency; microwave amplifiers;
fLanguage :
English
Journal_Title :
Circuits and Systems II: Express Briefs, IEEE Transactions on
Publisher :
ieee
ISSN :
1549-7747
Type :
jour
DOI :
10.1109/TCSII.2008.918993
Filename :
4470568
Link To Document :
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