• DocumentCode
    1098718
  • Title

    Concurrent Dual-Band Class-F Load Coupling Network for Applications at 1.7 and 2.14 GHz

  • Author

    Negra, Renato ; Sadeve, Alexandre ; Bensmida, Souheil ; Ghannouchi, Fadhel M.

  • Author_Institution
    Univ. of Calgary, Calgary
  • Volume
    55
  • Issue
    3
  • fYear
    2008
  • fDate
    3/1/2008 12:00:00 AM
  • Firstpage
    259
  • Lastpage
    263
  • Abstract
    Highly efficient multiband power amplifiers (PAs) are key elements for the development of future multistandard multiband communication terminals and cognitive radios. This paper reports the design of a multiharmonic dual-band Class-F power amplifier for applications at wireless communication frequencies based on a switchless multiharmonic multiband load coupling network topology. The proposed output network topology is able to precisely synthesize Class-F impedance conditions with up to three harmonics at two distinct nonharmonic frequencies without the need of switches or electronically tunable elements. The proposed topology was used to design a Class-F PA in hybrid technology for the frequency bands at 1.7 and 2.14 GHz. Optimum impedances for maximum efficiency of the used GaAs MESFET for the two bands were determined by multiharmonic load-pull measurements and synthesized by the proposed switchless dual-band Class-F network. With a dual-band input matching network, the fabricated PA achieves 44.0% and 61.3% drain efficiency for an output power of more than 32.8 dbm and 34.4 dbm at 1.7 and 2.14 GHz, respectively. To the best knowledge of the authors, this is the first concurrent multiharmonic dual-band PA reported in open literature.
  • Keywords
    III-V semiconductors; cognitive radio; coupled circuits; gallium arsenide; harmonic analysis; microwave amplifiers; microwave transistors; power amplifiers; radio networks; switching networks; telecommunication network topology; GaAs; GaAs MESFET; cognitive radios; dual-band class-F load coupling network; efficiency 44 percent to 61.3 percent; frequency 1.7 GHz to 2.14 GHz; multiband power amplifiers; multiharmonic dual-band Class-F power amplifier; multiharmonic load-pull measurements; multistandard communication terminals; optimum impedances; wireless communication frequencies; Class F; GaAs MESFETs; cognitive radio; dual-band power amplifiers; high efficiency; microwave amplifiers;
  • fLanguage
    English
  • Journal_Title
    Circuits and Systems II: Express Briefs, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1549-7747
  • Type

    jour

  • DOI
    10.1109/TCSII.2008.918993
  • Filename
    4470568