Title :
10K Gate I2L and 1K component analog compatible bipolar VLSI technology—HIT-2
Author :
Washio, Kastuyoshi ; Watanabe, Tomoyuki ; Okabe, Takahiro ; Horie, Noboru
Author_Institution :
Hitachi Ltd., Tokyo, Japan
fDate :
2/1/1985 12:00:00 AM
Abstract :
An advanced analog/digital bipolar VLSI technology that combines on the same chip 2-ns 10K I2L gates with 1K analog devices is proposed. The new technology, called high-density integration technology-2 (HIT-2), is based on a new structure concept that consists of three major techniques: shallow grooved-isolation, I2L active layer etching, and I2L current gain increase. I2L circuits with 80-MHz maximum toggle frequency have developed compatibly with n-p-n transistors having a BVCEOof more than 10 V and an fTof 5 GHz, and lateral p-n-p transistors having an fTof 150 MHz.
Keywords :
Analog circuits; Consumer products; Costs; Cutoff frequency; Dry etching; Isolation technology; Office automation; Oxidation; System-on-a-chip; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.21935