Title :
Degradation modes in planar structure in0.53Ga0.47As photodetectors
Author :
Tashiro, Yoshiharu ; Taguchi, Kenko ; Sugimoto, Yoshimasa ; Torikai, Toshitaka ; Nishida, Katsuhiko ; Taguchi, Katsuhisa ; Sugimoto, Yoshiki ; Torikai, T. ; Nishida, Keisuke
Author_Institution :
Nippon Electric Company, Ltd., Kawasaki, Japan
fDate :
3/1/1983 12:00:00 AM
Abstract :
Recoverable and nonrecoverable degradation modes have been found by forced degradation tests in In0.53Ga0.47As heterojunction photodetectors. In0.76Ga0.24As0.55P0.45cap layer and In0.53Ga0.47As light-absorption layer were grown by liquid-phase epitaxy (LPE) on a
Keywords :
Dark current; Degradation; Diodes; Gold; Heterojunctions; Indium phosphide; Life testing; Photodetectors; Photodiodes; Plasma temperature;
Journal_Title :
Lightwave Technology, Journal of
DOI :
10.1109/JLT.1983.1072092
