DocumentCode
1098747
Title
Annealing of Proton-Induced Random Telegraph Signal in CCDs
Author
Nuns, T. ; Quadri, G. ; David, J.P. ; Gilard, O.
Author_Institution
ONERA DESP, Toulouse
Volume
54
Issue
4
fYear
2007
Firstpage
1120
Lastpage
1128
Abstract
A silicon CCD imager has been irradiated with 10 MeV protons and measurements focused on random telegraph signal (RTS). A variance detection method is applied for quantifying the number of RTS after irradiation and through isochronal annealing. The observed behavior is analyzed and corresponds to the annealing of phosphorus-vacancies.
Keywords
annealing; proton effects; silicon radiation detectors; isochronal annealing; phosphorus-vacancies; proton-induced random telegraph signal; silicon CCD imager; variance detection method; Annealing; Charge coupled devices; Electrons; Energy states; Fluctuations; Kinetic theory; Pixel; Protons; Telegraphy; Temperature; Annealing; CCD; irradiation; proton;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2007.902351
Filename
4291771
Link To Document