• DocumentCode
    1098747
  • Title

    Annealing of Proton-Induced Random Telegraph Signal in CCDs

  • Author

    Nuns, T. ; Quadri, G. ; David, J.P. ; Gilard, O.

  • Author_Institution
    ONERA DESP, Toulouse
  • Volume
    54
  • Issue
    4
  • fYear
    2007
  • Firstpage
    1120
  • Lastpage
    1128
  • Abstract
    A silicon CCD imager has been irradiated with 10 MeV protons and measurements focused on random telegraph signal (RTS). A variance detection method is applied for quantifying the number of RTS after irradiation and through isochronal annealing. The observed behavior is analyzed and corresponds to the annealing of phosphorus-vacancies.
  • Keywords
    annealing; proton effects; silicon radiation detectors; isochronal annealing; phosphorus-vacancies; proton-induced random telegraph signal; silicon CCD imager; variance detection method; Annealing; Charge coupled devices; Electrons; Energy states; Fluctuations; Kinetic theory; Pixel; Protons; Telegraphy; Temperature; Annealing; CCD; irradiation; proton;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2007.902351
  • Filename
    4291771