Title :
High-speed IIL circuits using a sidewall base contact structure
Author :
Nakamura, Tahru ; Nakazato, Kazuo ; Miyazaki, Takao ; Okabe, Takahiro ; Nagata, Minoru
Author_Institution :
Hitachi Ltd., Tokyo, Japan
fDate :
2/1/1985 12:00:00 AM
Abstract :
New high-speed self-aligned IIL structures with 3 µm × 3 µm collectors that produce minimum gate delays of 290 ps/gate(fanout is 1) and power delay products of 15 fJ/gate at low injector current levels are described. Maximum toggle frequency in an IIL T-type flip-flop is measured at 5 mW and found to be up to 315 MHz.
Keywords :
Bipolar transistors; Delay; Electrodes; Epitaxial layers; Equivalent circuits; Flip-flops; Frequency; Power dissipation; Sputter etching; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.21937
