Title :
Analysis of Parasitic PNP Bipolar Transistor Mitigation Using Well Contacts in 130 nm and 90 nm CMOS Technology
Author :
Olson, Brian D. ; Amusan, Oluwole A. ; DasGupta, Sandeepan ; Massengill, Lloyd W. ; Witulski, Arthur F. ; Bhuva, Bharat L. ; Alles, Michael L. ; Warren, Kevin M. ; Ball, Dennis R.
Author_Institution :
Vanderbilt Univ., Nashville
Abstract :
Three-dimensional TCAD models are used in mixed- mode simulations to analyze the effectiveness of well contacts at mitigating parasitic PNP bipolar conduction due to a direct hit ion strike. 130 nm and 90 nm technology are simulated. Results show careful well contact design can improve mitigation. However, well contact effectiveness is seen to decrease from the 130 nm to the 90 nm simulations.
Keywords :
CMOS integrated circuits; bipolar transistors; CMOS technology; bipolar conduction; parasitic pnp bipolar transistor; well contact; Analytical models; Bipolar transistors; CMOS technology; Circuit simulation; Computational modeling; Design automation; Electrons; Geometry; Semiconductor device modeling; Single event upset; Guard contacts; parasitic bipolar conduction; singe-event effects; technology computer-aided design (TCAD) modeling;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2007.895243
