• DocumentCode
    1098807
  • Title

    Scaling considerations and dielectric breakdown improvement of a corrugated capacitor cell for a future dRAM

  • Author

    Sunami, Hideo ; Kure, Tokuo ; Yagi, Kunihiro ; Wada, Yasuo ; Yamaguchi, Ken ; Miyazawa, Hiroyuki ; Shimizu, Shinji

  • Author_Institution
    Hitachi, Ltd., Tokyo, Japan
  • Volume
    32
  • Issue
    2
  • fYear
    1985
  • fDate
    2/1/1985 12:00:00 AM
  • Firstpage
    296
  • Lastpage
    303
  • Abstract
    Further scaling of a corrugated capacitor cell (CCC) consisting of a moat capacitor is discussed in terms of cell configuration and device parameters. From the results of experimental analyses and device simulation, key parameters of cell scaling are suggested. In addition to the cell scalability, some improvements in dielectric breakdown of the capacitor insulator are described. This insulator integrity is a key issue for the reliability of dRAM´s having a CCC.
  • Keywords
    Analytical models; Capacitance; Capacitors; Degradation; Dielectric breakdown; Dielectrics and electrical insulation; Power supplies; Scalability; Silicon; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1985.21942
  • Filename
    1484689
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1098807