Analytical Theory for Extracting Specific Contact Resistances of Thick Samples From the Transmission Line Method

Metal-semiconductor contact resistances are important for many semiconductor devices. They are often determined with the transmission line method (TLM). However, the 1-D analytic theory of the TLM only covers conducting layers that are thin when compared with the width of the line-shaped contacts. We report a 2-D analytic theory of the TLM that also applies to thick conducting layers. We demonstrate the correctness and necessity for using the 2-D analytical theory by comparing it to finite element simulations and to experimental data of samples that vary in thickness.