• DocumentCode
    1099055
  • Title

    Tunnel effect in GaInAsP/InP double heterostructure diode

  • Author

    Matsui, Takashi ; Ohtsuka, K. ; Abe, Y. ; Ogata, Hiroaki

  • Author_Institution
    Mitsubishi Electr. Corp., Hyogo
  • Volume
    24
  • Issue
    19
  • fYear
    1988
  • fDate
    9/15/1988 12:00:00 AM
  • Firstpage
    1200
  • Lastpage
    1201
  • Abstract
    Negative differential resistance in a GaInAsP/InP double heterostructure diode with a pn junction annealed at 550-600°C is demonstrated. It is found that negative differential resistance is caused by the diffusion of impurities, Zn and Te, into the undoped GaInAsP layer
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; negative resistance; tunnel diodes; double heterostructure diode; negative differential resistance; pn junction; tunnel effect;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    29156
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1099055