Title :
Application of RADSAFE to Model the Single Event Upset Response of a 0.25 μm CMOS SRAM
Author :
Warren, Kevin M. ; Weller, Robert A. ; Sierawski, Brian D. ; Reed, Robert A. ; Mendenhall, Marcus H. ; Schrimpf, Ronald D. ; Massengill, Lloyd W. ; Porter, Mark E. ; Wilkinson, Jeffrey D. ; LaBel, Kenneth A. ; Adams, James H.
Author_Institution :
Inst. for Space & Defense Electron., Nashville
Abstract :
The RADSAFE simulation framework is described and applied to model SEU in a 0.25 mum CMOS 4 Mbit SRAM. For this circuit, the RADSAFE approach produces trends similar to those expected from classical rectangular parallelepiped models, but more closely represents the physical mechanisms responsible for SEU in the SRAM circuit.
Keywords :
CMOS memory circuits; SRAM chips; integrated circuit modelling; ion beam effects; semiconductor process modelling; 0.25 mum CMOS 4 Mbit SRAM; RADSAFE simulation framework; SEU model; heavy ion beam effects; size 0.25 mum; storage capacity 4 Mbit; Circuit simulation; Computational modeling; Microelectronics; Monte Carlo methods; NASA; Physics; Random access memory; Semiconductor device modeling; Single event upset; Space technology; GEANT4; RADSAFE; SEU; TCAD; heavy-ion;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2006.889810
