Title :
Monolithic pin-HEMT amplifier on an InP substrate grown by OMVPE for long-wavelength fibre optic communications
Author :
Sasaki, Gaku ; Koike, K. ; Kuwata, N. ; Ono, Keishi ; Yoshida, Kenta
Author_Institution :
Sumitomo Electr. Ind., Yokohama
fDate :
9/15/1988 12:00:00 AM
Abstract :
The authors have monolithically integrated a GaInAs pin-photodiode and an n-AlInAs/GaInAs HEMT amplifier on an InP substrate by OMVPE for long-wavelength fibre optic communications. The response of the pin-HEMT amplifiers for 1.6 Gbit/s (NRZ) signals has been obtained
Keywords :
high electron mobility transistors; optical communication equipment; optical fibres; semiconductor epitaxial layers; vapour phase epitaxial growth; 1.6 Gbit/s; AlInAs-GaInAsInP; HEMT amplifier; InP; NRZ; OMVPE; long-wavelength fibre optic communications; pin-HEMT amplifiers; pin-photodiode;
Journal_Title :
Electronics Letters
