• DocumentCode
    1099106
  • Title

    Monolithic pin-HEMT amplifier on an InP substrate grown by OMVPE for long-wavelength fibre optic communications

  • Author

    Sasaki, Gaku ; Koike, K. ; Kuwata, N. ; Ono, Keishi ; Yoshida, Kenta

  • Author_Institution
    Sumitomo Electr. Ind., Yokohama
  • Volume
    24
  • Issue
    19
  • fYear
    1988
  • fDate
    9/15/1988 12:00:00 AM
  • Firstpage
    1201
  • Lastpage
    1202
  • Abstract
    The authors have monolithically integrated a GaInAs pin-photodiode and an n-AlInAs/GaInAs HEMT amplifier on an InP substrate by OMVPE for long-wavelength fibre optic communications. The response of the pin-HEMT amplifiers for 1.6 Gbit/s (NRZ) signals has been obtained
  • Keywords
    high electron mobility transistors; optical communication equipment; optical fibres; semiconductor epitaxial layers; vapour phase epitaxial growth; 1.6 Gbit/s; AlInAs-GaInAsInP; HEMT amplifier; InP; NRZ; OMVPE; long-wavelength fibre optic communications; pin-HEMT amplifiers; pin-photodiode;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    29157
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1099106