Title :
Fast programmable 256K read only memory with on-chip test circuits
Author :
Atsumi, Shigeru ; Tanaka, Sumio ; Shinada, Kazuyoshi ; Yoshikawa, Kuniyoshi ; Makita, Kohji ; Nagakubo, Yoshihide ; Kanzaki, Koichi
Author_Institution :
Toshiba Research and Development Center, Kawasaki, Japan
fDate :
2/1/1985 12:00:00 AM
Abstract :
A 32K × 8 bits EPROM, which satisfies all requirements for a high-density EPROM, has been developed. The fast programming time is achieved by introducing a DSA structure into the memory cell. The low power consumption and fast access time are realized by utilizing n-well CMOS peripheral circuits. Various test circuits are implemented to alleviate lengthy screening time. Typical programming time, access time, and power dissipation are 3 µs/byte, 100 ns, and 5 mA, respectively.
Keywords :
Aluminum; CMOS memory circuits; CMOS technology; Circuit testing; EPROM; Energy consumption; Power dissipation; Read only memory; Semiconductor device testing; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.21970
