DocumentCode
1099120
Title
Fast programmable 256K read only memory with on-chip test circuits
Author
Atsumi, Shigeru ; Tanaka, Sumio ; Shinada, Kazuyoshi ; Yoshikawa, Kuniyoshi ; Makita, Kohji ; Nagakubo, Yoshihide ; Kanzaki, Koichi
Author_Institution
Toshiba Research and Development Center, Kawasaki, Japan
Volume
32
Issue
2
fYear
1985
fDate
2/1/1985 12:00:00 AM
Firstpage
502
Lastpage
507
Abstract
A 32K × 8 bits EPROM, which satisfies all requirements for a high-density EPROM, has been developed. The fast programming time is achieved by introducing a DSA structure into the memory cell. The low power consumption and fast access time are realized by utilizing n-well CMOS peripheral circuits. Various test circuits are implemented to alleviate lengthy screening time. Typical programming time, access time, and power dissipation are 3 µs/byte, 100 ns, and 5 mA, respectively.
Keywords
Aluminum; CMOS memory circuits; CMOS technology; Circuit testing; EPROM; Energy consumption; Power dissipation; Read only memory; Semiconductor device testing; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1985.21970
Filename
1484717
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