Simple theory of double-barrier tunneling

The author analyzes resonant electron tunneling in parallel-plane heterostructures that have a central well region enclosed by two generalized barriers, which are reflectors of the Bloch waves. A single Bloch pair is assumed for the central region as well as in the surrounding semi-infinite semiconductors. The transmission probability versus electron energy is obtained for this model in terms of the transmission probabilities of the two barrier elements taken separately and the quasi-classical transit time for the trapped electron to make one circuit of the central well layer. The implications and limitations of these results are briefly discussed