Mobility degradation in very thin Oxide p-channel MOSFET´s

The effective hole mobility in large-area p-channel MOSFET´s decreases systematically over a wide range of oxide fields as the gate oxide thickness decreases from 240 to 31 Å. A scattering mechanism based on the variations of the gate-charge-induced Coulomb scattering potential in the channel resulting from gate oxide thickness and/or structural fluctuations over the gate area is proposed to explain the results.