DocumentCode
1099235
Title
Novel split-gate MOSFET
Author
Akiya, M. ; Nakashima, Sadao
Author_Institution
Nippon Telegraph and Telephone Public Corporation, Atsugi-shi, Kanagawa, Japan
Volume
32
Issue
3
fYear
1985
fDate
3/1/1985 12:00:00 AM
Firstpage
589
Lastpage
593
Abstract
A new type of split-gate MOSFET (SG-MOSFET) is described that employs a complementary poly-Si-gate buried-channel MOS process. In this configuration, complementary SG-MOS´s provide higher transconductance and a one-order smaller magnitude of channel-length modulation than with conventional buried-channel MOSFET´s. Moreover, there is no requirement for additional mask steps. Four-times higher packing density was also obtained in a differential amplifier application.
Keywords
Boron; CMOS technology; Differential amplifiers; Fabrication; Filters; MOSFET circuits; Split gate flash memory cells; Telegraphy; Telephony; Transconductance;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1985.21982
Filename
1484728
Link To Document