Title :
Novel split-gate MOSFET
Author :
Akiya, M. ; Nakashima, Sadao
Author_Institution :
Nippon Telegraph and Telephone Public Corporation, Atsugi-shi, Kanagawa, Japan
fDate :
3/1/1985 12:00:00 AM
Abstract :
A new type of split-gate MOSFET (SG-MOSFET) is described that employs a complementary poly-Si-gate buried-channel MOS process. In this configuration, complementary SG-MOS´s provide higher transconductance and a one-order smaller magnitude of channel-length modulation than with conventional buried-channel MOSFET´s. Moreover, there is no requirement for additional mask steps. Four-times higher packing density was also obtained in a differential amplifier application.
Keywords :
Boron; CMOS technology; Differential amplifiers; Fabrication; Filters; MOSFET circuits; Split gate flash memory cells; Telegraphy; Telephony; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.21982
