Title :
Improvement of polysilicon oxide characteristics by fluorine incorporation
Author :
Chern, Horng Nan ; Lee, Chung Len ; Lei, Tan Fu
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
5/1/1994 12:00:00 AM
Abstract :
The effect of fluorine on the polysilicon oxide (polyoxide) characteristics is investigated. It is found that the polyoxide leakage current and breakdown strength are improved as fluorine is incorporated into the oxide film. Experimental results show that the improvement is believed to be due to the oxide stress relaxation rather than the change of the polyoxide/polysilicon interface texture.<>
Keywords :
electric breakdown of solids; electric strength; insulating thin films; leakage currents; metal-insulator-semiconductor structures; silicon compounds; stress relaxation; SiO:F; SiO:F film; breakdown strength; leakage current; oxide stress relaxation; polyoxide characteristics; polysilicon oxide characteristics; Amorphous silicon; Annealing; Chemical vapor deposition; Electric breakdown; Electrons; Leakage current; Nonvolatile memory; Plasma measurements; Plasma temperature; Stress;
Journal_Title :
Electron Device Letters, IEEE
