DocumentCode :
1099312
Title :
Modeling the generation current due to donor-acceptor twins in silicon p-n junctions
Author :
Cerofolini, G.F. ; Polignano, M.L. ; Savoini, I. ; Vanzi, Massimo
Author_Institution :
SGS-Ates Componenti Elettronici SpA, Central R & D, Agrate MI, Italy
Volume :
32
Issue :
3
fYear :
1985
fDate :
3/1/1985 12:00:00 AM
Firstpage :
628
Lastpage :
631
Abstract :
The experimental static current-voltage 
characteristics of almost ideal silicon p-n junctions are not adequately described by the classic Sah-Noyce-Shockley theory. The characteristics are accurately modeled by admitting the presence of a new class of defects in addition to Shockley-Read-Hall generation-recombination centers. The new center, modeled as a donor-acceptor twin, behaves as a pure generation center.
characteristics of almost ideal silicon p-n junctions are not adequately described by the classic Sah-Noyce-Shockley theory. The characteristics are accurately modeled by admitting the presence of a new class of defects in addition to Shockley-Read-Hall generation-recombination centers. The new center, modeled as a donor-acceptor twin, behaves as a pure generation center.Keywords :
Character generation; Current density; Current-voltage characteristics; Diodes; Helium; Ionization; P-n junctions; Rectifiers; Silicon; Temperature;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1985.21989
Filename :
1484735
Link To Document :
