A theory of the Hooge parameters of solid-state devices

Handel\´s theory of quantum 1/f noise is applied to the Hooge parameters of bipolar transistors and various types of FET\´s. Very low values for the Hooge parameters αHnand αHpfor electrons and holes are obtained. For several cases the experimental data seem to agree with the predicted theoretical limit whereas in other cases the mobility 1/f noise is masked by other noise sources. In good GaAs devices the predicted quantum limit for αHnis reached within a factor 5-10. The theory is also applied to the Hg1-xCdxTe materials and devices. Because of the very low effective masses involved, the theory predicts values as high as 2 × 10^-4-2 × 10^-5, depending on . What remains presently unexplained are the high values of αHfor semiconductor resistors and long p-n diodes.