مرکز منطقه ای اطلاع رساني علوم و فناوري - Application of the DPC method to Schottky-barrier photodiode with interfacial layer

DocumentCode :

1099448

Title :

Application of the DPC method to Schottky-barrier photodiode with interfacial layer

Author :

Hasegawa, Shigeru ; Tanaka, Akira ; Sukegawa, Tokuzo

Author_Institution :

Shizuoka University, Hamamatsu, Japan

Volume :

Issue :

fYear :

1985

fDate :

3/1/1985 12:00:00 AM

Firstpage :

711

Lastpage :

712

Abstract :

The differential photocurrent (DPC) method has been extended for the Schottky-barrier photodiode with the interfacial layer by taking the effect of the interfacial layer into account. The hole diffusion length Lpin n-type GaAs0.62P0.38layer was obtained to be 1.9 µm within the accuracy of 7 percent from the relation between the absorption coefficient α and the DPC-to-photocurrent ratio ( $\\Delta I_{p}/ \\Delta W)_{W=0}/(I_{p})_{W=0}$ .

Keywords :

Absorption; Area measurement; Artificial intelligence; Electrodes; Energy measurement; Length measurement; Optical device fabrication; Photoconductivity; Photodiodes; Schottky barriers;

fLanguage :

English

Journal_Title :

Electron Devices, IEEE Transactions on

Publisher :

ieee

ISSN :

0018-9383

Type :

jour

DOI :

10.1109/T-ED.1985.22002

Filename :

1484748

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1099448