Title :
Interface studies of MBE-grown GaInAs/GaAsSb heterostructures lattice-matched to InP by Auger electron spectroscopy
Author :
Fujii, T. ; Nakata, Y. ; Sugiyama, Y. ; Toda, Y. ; Miyauchi, E.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
fDate :
9/15/1988 12:00:00 AM
Abstract :
The first interface study of an MBE-grown GaInAs/GaAsSb heterostructure lattice-matched to InP has been performed by Auger electron spectroscopy combined with ion sputtering. No surface segregation of Sb in the GaInAs/GaAsSb heterostructure was observed. The measured interface width of this heterostructure was found to be 2.2 nm by monitoring the Auger peak-to-peak height of the Sb MNN transition under 0.5 kV Ar+ ion sputtering
Keywords :
Auger effect; electron spectroscopy; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; p-n heterojunctions; semiconductor epitaxial layers; semiconductor growth; Auger electron spectroscopy; Auger peak-to-peak height; GaInAs-GaAsSb; InP; MBE-grown; MNN transition; heterostructure; interface width; ion sputtering; surface segregation;
Journal_Title :
Electronics Letters
