DocumentCode :
1099454
Title :
Monolithic integration of curved waveguides and channeled-substrate DH lasers by wet chemical etching
Author :
Yuan, Yourong ; Perillo, Lawrence ; Merz, James L.
Author_Institution :
Changchun Institute of Physics, Changchun, China
Volume :
1
Issue :
4
fYear :
1983
fDate :
12/1/1983 12:00:00 AM
Firstpage :
630
Lastpage :
637
Abstract :
Integration of AlGaAs/GaAs curved waveguides and other two-dimensional waveguides with DH lasers and detectors is demonstrated. Devices are fabricated from LPE AlGaAs/GaAs layers by wet chemical etching processes. Differential transfer efficiencies of \\eta_{t}= 5 percent are routinely achieved in a structure consisting of an integrated laser, a 90° curved waveguide with 150μm radius, and a detector, for the case where one laser mirror is etched and one cleaved. This value is \\eta_{t}= 4 percent if both mirrors are etched. A comparison of waveguide attenuation between straight and curved rib waveguides is given, along with the transfer characteristics of curved waveguides. The loss coefficient of curved rib waveguides with 150-μm radius is about two times that of a straight waveguide of the same length. The fabrication and properties of channeled-substrate crescent (CSC) lasers and detectors with transverse single-mode confinement, monolithically integrated by means of passive CSC interconnecting waveguides, is also described.
Keywords :
Gallium materials/devices; Gallium materials/lasers; Integrated optics; Waveguide bends; Chemical lasers; Chemical processes; DH-HEMTs; Gallium arsenide; Mirrors; Monolithic integrated circuits; Optical attenuators; Optical device fabrication; Waveguide lasers; Wet etching;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/JLT.1983.1072156
Filename :
1072156
Link To Document :
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