Title :
The influence of donor neutralization on the transfer characteristics of MODFET´s at 77 K: Theory and experiment
Author :
Masselink, W.T. ; Drummond, T.J. ; Klem, J. ; Kopp, W. ; Chang, Y.C. ; Ponse, F. ; Morkoç, H.
Author_Institution :
University of Illinois, Urbana, IL
fDate :
3/1/1985 12:00:00 AM
Abstract :
Calculations and experiments on GaAs/AlGaAs MODFET´s at 77 K show that due to neutralization of the relatively deep donors an increase in gate voltage will neither increase the two-dimensional electron concentration nor introduce free electrons into the AlGaAs for some range of gate voltages. The corresponding leveling off of drain saturation current is more pronounced in depletion- than in enhancement-mode devices.
Keywords :
Dynamic range; Electron devices; Electron mobility; HEMTs; MODFET circuits; Photovoltaic cells; Photovoltaic systems; Silicon; Solar power generation; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22004
