DocumentCode :
1099592
Title :
Ionising radiation effects: a vital issue for semiconductor electronics
Author :
Chugg, Andrew M.
Author_Institution :
Radiation Effects Group, British Aerosp. (Dynamics) Ltd., Filton, UK
Volume :
3
Issue :
3
fYear :
1994
fDate :
6/1/1994 12:00:00 AM
Firstpage :
123
Lastpage :
130
Abstract :
Many modern electronic systems are required to survive harsh radiation environments, such as those naturally present in space or those which may be artificially created by machines or nuclear devices. Semiconductor devices are innately susceptible to ionising radiation effects due to intrinsic features of their design. Certain specific radiation effects mechanisms may be identified as limiting the radiation survivability of systems using current device fabrication technologies. These include dose-rate-induced latch-up of ICs, gate oxide charging in MOSFETs, displacement damage in solar cells and single event upset in memory devices. Technology trends in semiconductor electronics are exacerbating latch-up problems and single event upsets in particular. These radiation effects are discussed
Keywords :
electrical faults; ion beam effects; monolithic integrated circuits; semiconductor devices; MOSFET; device fabrication technologies; displacement damage; dose-rate-induced latch-up; gate oxide charging; integrated circuits; ionising radiation effects; memory devices; radiation survivability; semiconductor electronics; single event upset; solar cells;
fLanguage :
English
Journal_Title :
Engineering Science and Education Journal
Publisher :
iet
ISSN :
0963-7346
Type :
jour
DOI :
10.1049/esej:19940310
Filename :
291651
Link To Document :
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