DocumentCode :
1099604
Title :
Frequency responses of graded-bandgap low-noise avalanche photodiodes
Author :
Rakshit, Sambhu ; Sarin, R.
Author_Institution :
Indian Institute of Technology, Kharagpur, India
Volume :
32
Issue :
4
fYear :
1985
fDate :
4/1/1985 12:00:00 AM
Firstpage :
749
Lastpage :
752
Abstract :
Frequency responses of graded-bandgap low-noise avalanche photodiodes using AlcGa1-cAs, GaAS1-cSbc, and IncGa1-cAs have been computed using a novel hybrid computational technique. Response characteristics of nongraded structures have also been computed and a comparison is made.
Keywords :
Avalanche photodiodes; Breakdown voltage; Charge carrier processes; Current density; Diodes; Frequency; Ionization; Optical fiber communication; Photonic band gap; Wideband;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1985.22015
Filename :
1484761
Link To Document :
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