DocumentCode :
109961
Title :
Low-Loss Singlemode PECVD Silicon Nitride Photonic Wire Waveguides for 532–900 nm Wavelength Window Fabricated Within a CMOS Pilot Line
Author :
Subramanian, Ananth Z. ; Neutens, Pieter ; Dhakal, Ashim ; Jansen, Roelof ; Claes, Tom ; Rottenberg, Xavier ; Peyskens, Frederic ; Selvaraja, Shankar ; Helin, Philippe ; Dubois, Beatrice ; Leyssens, Kenny ; Severi, Simone ; Deshpande, Paru ; Baets, Roel ;
Author_Institution :
Photonics Res. Group, Ghent Univ., Ghent, Belgium
Volume :
5
Issue :
6
fYear :
2013
fDate :
Dec. 2013
Firstpage :
2202809
Lastpage :
2202809
Abstract :
PECVD silicon nitride photonic wire waveguides have been fabricated in a CMOS pilot line. Both clad and unclad single mode wire waveguides were measured at λ = 532, 780, and 900 nm, respectively. The dependence of loss on wire width, wavelength, and cladding is discussed in detail. Cladded multimode and singlemode waveguides show a loss well below 1 dB/cm in the 532-900 nm wavelength range. For singlemode unclad waveguides, losses 1 dB/cm were achieved at λ = 900 nm, whereas losses were measured in the range of 1-3 dB/cm for λ = 780 and 532 nm, respectively.
Keywords :
CMOS integrated circuits; cladding techniques; integrated optics; optical waveguides; plasma CVD; silicon compounds; CMOS pilot line; PECVD; SiN; cladded multimode waveguides; photonic wire waveguides; single mode unclad waveguides; single mode wire waveguides; wavelength 532 nm to 900 nm; Waveguides; fabrication and characterization; gratings; photonic materials; waveguide devices;
fLanguage :
English
Journal_Title :
Photonics Journal, IEEE
Publisher :
ieee
ISSN :
1943-0655
Type :
jour
DOI :
10.1109/JPHOT.2013.2292698
Filename :
6674990
Link To Document :
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