Title :
Length dependence of threshold current in multiple quantum well lasers
Author :
Wilcox, J.Z. ; Peterson, Gilbert L. ; Ou, Sin-Liang ; Yang, Jie J. ; Jansen, Maarten ; Schechter, D.
Author_Institution :
Space & Technol. Group, TRW, Redondo Beach, CA
fDate :
9/15/1988 12:00:00 AM
Abstract :
The threshold current density of single-quantum-well lasers increases at short laser lengths more rapidly than for multiple-well lasers. Using microscopic gain calculations, these differences are shown to be a natural consequence of the nonlinear gain/current relation associated with high electron concentrations in thin wells. The threshold current shows a minimum that depends on facet reflectivities and number of wells
Keywords :
semiconductor junction lasers; semiconductor quantum wells; electron concentrations; facet reflectivities; laser lengths; microscopic gain calculations; multiple quantum well lasers; nonlinear gain/current relation; thin wells; threshold current;
Journal_Title :
Electronics Letters
