Title :
400-A (Pulsed) Vertical GaN p-n Diode With Breakdown Voltage of 700 V
Author :
Kizilyalli, Isik C. ; Edwards, Andrew P. ; Hui Nie ; Phong Bui-Quang ; Disney, Don ; Bour, David
Author_Institution :
Avogy, Inc., San Jose, CA, USA
Abstract :
There is a great interest in monolithic GaN semiconductor devices with high current capability for power electronics. In this letter, large area vertical GaN p-n diodes fabricated on bulk GaN substrates are discussed. Diodes with areas as large as 16 mm2 with breakdown voltages exceeding 700 V and pulsed (100 μs) currents approaching 400 A are reported. This is made possible for the first time in part due to the recent availability of improved quality bulk GaN substrates.
Keywords :
III-V semiconductors; gallium compounds; power semiconductor diodes; semiconductor device breakdown; wide band gap semiconductors; GaN; current 400 A; monolithic semiconductor devices; power electronics; pulsed vertical p-n diode; time 100 mus; voltage 700 V; Current measurement; Gallium nitride; Schottky diodes; Silicon; Substrates; Gallium nitride; bulk GaN substrates; power diodes; power-semiconductor devices; scaling; scaling.;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2014.2319214
