Al/Si contact resistance for submicrometer design rules

The resistance of contacts between aluminum/1.5-percent silicon and doped silicon is experimentally determined as a function of contact sizes from 0.6 to 4 µm square. Silicon contacted was doped to varied concentrations with either boron or phosphorus. The magnitudes of resistances observed for submicrometer geometry contacts underscore the need for a lower resistance-contact process for high-performance VLSI.