Title :
Tunneling effect in CdxHg1-xTe photodiodes
Author :
Placzek-Popko, Eva ; Pawlikowski, Janusz M.
Author_Institution :
Technical University of Wroclaw, Wroclaw, Poland
fDate :
4/1/1985 12:00:00 AM
Abstract :
The current-voltage I-U characteristics and those of log I-U, dU/dI-U, and d2U/dI2-U of CdxHg1-xTe (x = 0.20-0.27) photodiodes were measured in the temperature range of 4.2-77 K. The data analysis indicates the backward-type behavior and both the elastic and inelastic resonant-tunneling effects. The resonant tunneling itself seems to originate from resonance-energy states (defect states) located within the junction area.
Keywords :
Annealing; Conductivity; Contact resistance; Electrical resistance measurement; Electron devices; Energy conversion; Geometry; Research and development; Solid state circuits; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22031
