Title :
The computation of semiconductor sheet resistance
Author :
Choma, John, Jr.
Author_Institution :
Aerospace Corporation, Los Angeles, CA
fDate :
4/1/1985 12:00:00 AM
Abstract :
The effect of a nonuniform impurity concentration on semiconductor sheet resistance is analytically investigated. It is shown that potentially significant modeling errors result from the tacit neglect of concentration nonuniformity.
Keywords :
Bipolar transistors; Conductivity; Conductors; Implants; MOSFETs; Optical devices; Semiconductor impurities; Silicon; Slabs; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22032
