Increasing the current density of dielectric-base transistors with an MgO emitter-base barrier

Author

Yoshida, A. ; Tamura, H. ; Takauchi, H. ; Hato, T. ; Yokoyama, N.

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

Volume

4

Issue

2

fYear

1994

fDate

6/1/1994 12:00:00 AM

Firstpage

76

Lastpage

80

Abstract

We measured the current-voltage characteristics of YBa/sub 2/Cu/sub 3/O/sub 7-x//oxide/n-SrTiO/sub 3/ diodes using NdGaO/sub 3/, LaAlO/sub 3/, CeO/sub 2/, and MgO as the oxide. MgO films had the highest current density. We then fabricated dielectric-base transistors with a YBa/sub 2/Cu/sub 3/O/sub 7-x/(YBCO) emitter/collector on a SrTiO/sub 3/ dielectric base with an MgO barrier. The transistors had both voltage and current gains exceeding unity at 4.2 K. The emitter current density was about 4/spl times/10/sup 3/ A/cm/sup 2/ at a collector-emitter voltage of 10 V and base-emitter voltage 10 V; this is 2 to 3 orders of magnitude larger than that of transistors with NdGaO/sub 3/ emitter-base barrier. We obtained a transconductance of around 0.4 mS at a collector-emitter voltage of 10 V for a device with a 6-/spl mu/m-diameter emitter.<>

Keywords

barium compounds; high-temperature superconductors; superconducting junction devices; yttrium compounds; 10 V; 4.2 K; 6 micron; YBa/sub 2/Cu/sub 3/O/sub 7/-MgO-SrTiO/sub 3/; base-emitter voltage; collector-emitter voltage; current density; current gains; current-voltage characteristics; dielectric-base transistors; emitter current density; emitter-base barrier; three-terminal high-T/sub c/ superconducting transistors; transconductance; voltage gains; Current density; Dielectric materials; Diodes; FETs; Josephson junctions; Superconducting devices; Superconducting microwave devices; Superconducting transmission lines; Voltage; Yttrium barium copper oxide;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/77.291694

Filename

291694