DocumentCode
1099801
Title
Self-aligned gate GaAs IC with 4.0-GHz clock frequency
Author
Lee, Roberte ; Levy, H.M. ; Bryan, R.P.
Author_Institution
Hughes Aircraft Laboratories, Malibu, CA
Volume
32
Issue
4
fYear
1985
fDate
4/1/1985 12:00:00 AM
Firstpage
848
Lastpage
850
Abstract
This paper reports fabrication of high-speed GaAs divider IC\´s implemented using self-aligned gate (SAG) technology. BFL circuits employing SAG D-MESFET\´s have operated at higher clock speed (4.0 GHz) and have achieved higher yield (> 80 percent) than circuits with comparable threshold voltage and gate-length fabricated using "selective implant" or "recessed gate" technology.
Keywords
Clocks; FETs; Fabrication; Frequency; Gallium arsenide; Gold; Implants; Logic circuits; Thermal resistance; Threshold voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1985.22034
Filename
1484780
Link To Document