Title :
Model for the temperature dependence of the threshold voltage of modulation-doped field-effect transistors
Author_Institution :
Tata Institute of Fundamental Research, Bombay, India
fDate :
5/1/1985 12:00:00 AM
Abstract :
A model for the temperature dependence Of the threshold voltage of modulation-doped FET´s caused by traps in doped AlGaAs is presented. The model takes into account the charge distribution in the depletion region determined by the temperature and time-dependent occupation of traps. The theory shows excellent agreement with experiment in the temperature range 77 to 400 K.
Keywords :
Electric variables; Epitaxial layers; FETs; Gallium arsenide; HEMTs; MODFETs; Stability; Temperature dependence; Temperature distribution; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22039
