DocumentCode
1099856
Title
Model for the temperature dependence of the threshold voltage of modulation-doped field-effect transistors
Author
Subramanian, S.
Author_Institution
Tata Institute of Fundamental Research, Bombay, India
Volume
32
Issue
5
fYear
1985
fDate
5/1/1985 12:00:00 AM
Firstpage
865
Lastpage
870
Abstract
A model for the temperature dependence Of the threshold voltage of modulation-doped FET´s caused by traps in doped AlGaAs is presented. The model takes into account the charge distribution in the depletion region determined by the temperature and time-dependent occupation of traps. The theory shows excellent agreement with experiment in the temperature range 77 to 400 K.
Keywords
Electric variables; Epitaxial layers; FETs; Gallium arsenide; HEMTs; MODFETs; Stability; Temperature dependence; Temperature distribution; Threshold voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1985.22039
Filename
1484785
Link To Document