Noise associated with charge injection into-a CCD by current integration through a MOS transistor

The noise charge resulting from integrating a noisy current at a CCD input (equivalent to a MOS transistor) is evaluated. The noise contributions of the signal source and of the input transistor can be separated from other components of the CCD noise. Moreover, our measurements show a very good agreement with previously reported 1/f noise results for MOS transistors working in weak or strong inversion regimes.