Title :
The effects of carrier-concentration-dependent bandgap narrowing on bipolar-device characteristics
Author :
Park, Young-June ; Cook, Robert K. ; Gaur, Santosh P.
Author_Institution :
IBM General Technology Division, Hopewell Junction, NY
fDate :
5/1/1985 12:00:00 AM
Abstract :
A modeling of carrier-concentration-dependent bandgap narrowing in silicon bipolar transistors is proposed. Using a two-dimensional numerical simulation program, the effects of this phenomenon on the bipolar-device characteristics under high-level injection conditions have been studied. Transistor β falloff slows down due to the carrier-concentration-dependent bandgap narrowing, whereas there is no appreciable effect on cutoff frequency fTversus Jccharacteristics.
Keywords :
Bipolar transistors; Cutoff frequency; Helium; Neodymium; Numerical simulation; Performance evaluation; Photonic band gap; Semiconductor device doping; Semiconductor process modeling; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22041