• DocumentCode
    1099877
  • Title

    The effects of carrier-concentration-dependent bandgap narrowing on bipolar-device characteristics

  • Author

    Park, Young-June ; Cook, Robert K. ; Gaur, Santosh P.

  • Author_Institution
    IBM General Technology Division, Hopewell Junction, NY
  • Volume
    32
  • Issue
    5
  • fYear
    1985
  • fDate
    5/1/1985 12:00:00 AM
  • Firstpage
    874
  • Lastpage
    876
  • Abstract
    A modeling of carrier-concentration-dependent bandgap narrowing in silicon bipolar transistors is proposed. Using a two-dimensional numerical simulation program, the effects of this phenomenon on the bipolar-device characteristics under high-level injection conditions have been studied. Transistor β falloff slows down due to the carrier-concentration-dependent bandgap narrowing, whereas there is no appreciable effect on cutoff frequency fTversus Jccharacteristics.
  • Keywords
    Bipolar transistors; Cutoff frequency; Helium; Neodymium; Numerical simulation; Performance evaluation; Photonic band gap; Semiconductor device doping; Semiconductor process modeling; Silicon;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1985.22041
  • Filename
    1484787
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1099877