DocumentCode :
1099877
Title :
The effects of carrier-concentration-dependent bandgap narrowing on bipolar-device characteristics
Author :
Park, Young-June ; Cook, Robert K. ; Gaur, Santosh P.
Author_Institution :
IBM General Technology Division, Hopewell Junction, NY
Volume :
32
Issue :
5
fYear :
1985
fDate :
5/1/1985 12:00:00 AM
Firstpage :
874
Lastpage :
876
Abstract :
A modeling of carrier-concentration-dependent bandgap narrowing in silicon bipolar transistors is proposed. Using a two-dimensional numerical simulation program, the effects of this phenomenon on the bipolar-device characteristics under high-level injection conditions have been studied. Transistor β falloff slows down due to the carrier-concentration-dependent bandgap narrowing, whereas there is no appreciable effect on cutoff frequency fTversus Jccharacteristics.
Keywords :
Bipolar transistors; Cutoff frequency; Helium; Neodymium; Numerical simulation; Performance evaluation; Photonic band gap; Semiconductor device doping; Semiconductor process modeling; Silicon;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1985.22041
Filename :
1484787
Link To Document :
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