Title :
GaInAs/GaAs multiple quantum well reflection modulators
Author :
Dobbelaere, Wim ; Huang, Dijiang ; Kalem, Sid´Ali ; Morkoc, H.
Author_Institution :
Coordinated Sci. Lab., Illinois Univ., Urbana, IL
fDate :
9/15/1988 12:00:00 AM
Abstract :
The authors demonstrate a p-i-n reflection modulator consisting of a 50-period strained layer Ga0.85In0.15As/GaAs multiple quantum well and a 5-period AlAs/GaAs quarter-wave stack dielectric mirror, grown on a GaAs substrate by molecular beam epitaxy. They observed a relative change in the reflectivity of the modulator of 12% with 4.5 V reverse bias voltage and at 0.996 μm wavelength
Keywords :
III-V semiconductors; electro-optical devices; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical communication equipment; optical modulation; optoelectronic devices; semiconductor quantum wells; 0.996 micron; 4.5 V; Ga0.85In0.15As-GaAs-AlAs; GaAs substrate; III-V semiconductors; MBE; PIN type; dielectric mirror; molecular beam epitaxy; multiple quantum well; optical transmission; optoelectronic device; p-i-n structure; quarter-wave stack; reflection modulators; reverse bias voltage; strained layer MQW;
Journal_Title :
Electronics Letters
