DocumentCode
1099995
Title
Compatibility in heterogeneous integration of a CdTe interdigitated photoconductor with an AlGaAs field-effect transistor
Author
Fallahi, M. ; Therez, F. ; Esteve, D. ; Kendil, D. ; Barbe, M. ; Cohen-Solal, G.
Author_Institution
Lab. d´´Autom. et d´´Anal. des Syst., CNRS, Toulouse, France
Volume
24
Issue
19
fYear
1988
fDate
9/15/1988 12:00:00 AM
Firstpage
1245
Lastpage
1246
Abstract
A CdTe photoconductor-AlGaAs/GaAs FET OEIC has been fabricated for the first time. The compatibility of such an integration is shown. Such an integration permits the use of high-quality optical compounds with performance electronic materials. A responsivity of 30 A/W at 0.77 μm has been obtained for integrated circuits. This integration opens a new perspective in heterostructure infrared OEICs
Keywords
II-VI semiconductors; cadmium compounds; field effect integrated circuits; infrared detectors; integrated optoelectronics; photodetectors; 0.77 micron; AlGaAs field-effect transistor; AlGaAs-GaAs; CdTe; II-VI semiconductors; III-V semiconductors; IR imaging; compatibility; heterogeneous integration; heterostructure infrared OEICs; integrated circuits; integrated optoelectronics; interdigitated photoconductor;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
29188
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