Title :
Low threshold AlGaAs BH lasers fabricated by one-step MOCVD
Author :
Narui, H. ; Ohata, Takuma ; Mori, Yojiro
Author_Institution :
Sony Corp. Res. Center, Yokohama
fDate :
9/15/1988 12:00:00 AM
Abstract :
Buried-heterojunction (BH) AlGaAs lasers were fabricated by one-step MOCVD epitaxial growth on an inverse mesa etched GaAs substrate. A low threshold current of 6 mA was obtained and the lasing wavelength was approximately 780 nm. The laser beam shape was nearly circular with an aspect ratio less than 1.3
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 6 mA; 780 nm; AlGaAs-GaAs; III-V semiconductors; VPE; buried heterojunction; circular beam shape; epitaxial growth; fabrication; inverse mesa etched GaAs substrate; lasing wavelength; low threshold current; one-step MOCVD; semiconductor lasers;
Journal_Title :
Electronics Letters
