Title :
High contrast-ratio electroabsorptive GaInAs/InP quantum well modulator
Author :
Guy, D.R.P. ; Taylor, L.L. ; Besgrove, D.D. ; Apsley, N.
Author_Institution :
R. Signals & Radar Establ., Great Malvern
fDate :
9/15/1988 12:00:00 AM
Abstract :
A clear quantum-confined Stark shift is reported in a 150 quantum-well GaInAs/InP PIN diode grown by atmospheric pressure MOCVD. 4.1 dB modulation (2.6:1 contrast ratio, 4.9 dB insertion loss) is achieved in perpendicular (mesa) geometry at 1.59 μm wavelength in an electric field of ~1.3×105 V cm-1. Growth is on a semi-insulating rather than a p+-substrate, to eliminate the effects of free-carrier absorption
Keywords :
III-V semiconductors; electro-optical devices; gallium arsenide; indium compounds; optical modulation; semiconductor quantum wells; 1.59 micron; 4.9 dB; GaInAs-InP; MQW; PIN diode; atmospheric pressure MOCVD; electroabsorptive type; fabrication; high contrast ratio; insertion loss; mesa geometry; quantum well modulator; quantum-confined Stark shift; semiinsulating substrate;
Journal_Title :
Electronics Letters
