• DocumentCode
    1100068
  • Title

    Anodic nitridation of silicon and silicon dioxide

  • Author

    Wong, S. Simon ; Oldham, William G.

  • Author_Institution
    Cornell University, Ithaca, NY
  • Volume
    32
  • Issue
    5
  • fYear
    1985
  • fDate
    5/1/1985 12:00:00 AM
  • Firstpage
    978
  • Lastpage
    982
  • Abstract
    Anodic nitridation of Si wafers and SiO2films in an ammonia plasma was investigated. Compositions of the anodic nitride and the anodic nitrided-oxide films were analyzed with Auger electron spectroscopy and Rutherford backscattering techniques. The etching and oxidation behavior as well as the interfacial, electrical conduction, and charge trapping properties were studied.
  • Keywords
    Annealing; Backscatter; Electrons; Etching; Plasma applications; Plasma properties; Plasma temperature; Semiconductor films; Silicon compounds; Spectroscopy;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1985.22056
  • Filename
    1484802
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1100068