Title :
FM noise and power-dependent linewidth of GaAs/AlGaAs GRINSCH-SQW-MCRW flared waveguide lasers
Author :
Hartl, E. ; Heinrich, M. ; Harth, W.
Author_Institution :
Lehrstuhl fur Allgemeine Elektrotech. und Angewandte Elektron., Munchen
fDate :
12/8/1988 12:00:00 AM
Abstract :
The power-dependent part of the linewidth of GaAs/AlGaAs GRINSCH-SQW flared waveguide lasers has been determined from FM noise measurements. For the linewidth-power product a low value of 4 MHz mW has been found, which can be related to the small spontaneous emission coefficient βsp≃(3.7±1)×10-6 and a linewidth enhancement factor α≃1.2±0.5
Keywords :
III-V semiconductors; aluminium compounds; electron device noise; gallium arsenide; semiconductor junction lasers; FM noise measurements; GRINSCH-SQW-MCRW flared waveguide lasers; GaAs-AlGaAs; linewidth enhancement factor; linewidth-power product; power-dependent linewidth; spontaneous emission coefficient;
Journal_Title :
Electronics Letters
