• DocumentCode
    1100084
  • Title

    FM noise and power-dependent linewidth of GaAs/AlGaAs GRINSCH-SQW-MCRW flared waveguide lasers

  • Author

    Hartl, E. ; Heinrich, M. ; Harth, W.

  • Author_Institution
    Lehrstuhl fur Allgemeine Elektrotech. und Angewandte Elektron., Munchen
  • Volume
    24
  • Issue
    25
  • fYear
    1988
  • fDate
    12/8/1988 12:00:00 AM
  • Firstpage
    1536
  • Lastpage
    1537
  • Abstract
    The power-dependent part of the linewidth of GaAs/AlGaAs GRINSCH-SQW flared waveguide lasers has been determined from FM noise measurements. For the linewidth-power product a low value of 4 MHz mW has been found, which can be related to the small spontaneous emission coefficient βsp≃(3.7±1)×10-6 and a linewidth enhancement factor α≃1.2±0.5
  • Keywords
    III-V semiconductors; aluminium compounds; electron device noise; gallium arsenide; semiconductor junction lasers; FM noise measurements; GRINSCH-SQW-MCRW flared waveguide lasers; GaAs-AlGaAs; linewidth enhancement factor; linewidth-power product; power-dependent linewidth; spontaneous emission coefficient;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    29199
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1100084