Title :
Millimeter-wave power operation of an AlGaAs/InGaAs/GaAs quantum well MISFET
Author :
Kim, Bumman ; Matyi, Richard J. ; Wurtele, Marianne ; Bradshaw, Keith ; Khatibzadeh, M. Ali ; Tserng, Hua Quen
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
fDate :
10/1/1989 12:00:00 AM
Abstract :
The authors have developed state-of-the-art millimeter-wave power transistors using quantum-well MISFETs. MISFETs with both undoped InGaAs wells and doped InGaAs wells have been built. The ft of the MISFETs with doped well was higher than that of MISFETs with undoped wells, indicating that the device speed does not degrade when the charge transport layer is doped. The power performance of the MISFETs with doped wells was far superior. The best device delivered a power density of 1.0 W/mm with 3.2-dB gain and 27% power-added efficiency at 60 GHz
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; insulated gate field effect transistors; power transistors; solid-state microwave devices; 27 percent; 3.2 dB; 60 GHz; AlGaAs-InGaAs-GaAs; charge transport layer; device speed; gain; millimeter-wave power transistors; power density; power performance; power-added efficiency; quantum-well MISFETs; Degradation; Electrons; Frequency; Gallium arsenide; Indium gallium arsenide; Laboratories; MESFETs; MISFETs; Millimeter wave technology; Millimeter wave transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
