• DocumentCode
    1100109
  • Title

    A SPICE modeling technique for GaAs MESFET IC´s

  • Author

    Huang, Chern I. ; Thorbjornsen, Arthur R.

  • Author_Institution
    Air Force Wright Aeronautical Laboratories, Wright-Patterson Air Force Base, OH
  • Volume
    32
  • Issue
    5
  • fYear
    1985
  • fDate
    5/1/1985 12:00:00 AM
  • Firstpage
    996
  • Lastpage
    998
  • Abstract
    A vertically integrated device modeling technique for GaAs IC´s is presented for use in circuit simulation. Most of the SPICE2 capability can be utilized for modeling the gate transit time and parasitic effects. A computer program has also been developed to extract model parameters from the measured device data.
  • Keywords
    Current measurement; Delay effects; Electrical resistance measurement; Equations; Gallium arsenide; Integrated circuit modeling; MESFET integrated circuits; Mathematical model; SPICE; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1985.22060
  • Filename
    1484806
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1100109