Thermionic-emission diffusion model of current conduction in polycrystalline silicon

A comprehensive model of current conduction in polycrystalline silicon based on thermionic-emission diffusion theory is developed. On the basis of this model, a more general expression for the effective majority-carrier mobility is derived which reduces to thermionic-emission (TE) theory-based expressions under certain simplifying assumptions and also helps in understanding the physical significance of the scaling factor used by earlier workers to explain their experimental results.