A Low-Voltage Mobility-Based Frequency Reference for Crystal-Less ULP Radios

Author

Sebastiano, Fabio ; Breems, Lucien J. ; Makinwa, Kofi A A ; Drago, Salvatore ; Leenaerts, Domine M W ; Nauta, Bram

Author_Institution

NXP Semicond., Eindhoven, Netherlands

Volume

44

Issue

7

fYear

2009

fDate

7/1/2009 12:00:00 AM

Firstpage

2002

Lastpage

2009

Abstract

The design of a 100 kHz frequency reference based on the electron mobility in a MOS transistor is presented. The proposed low-voltage low-power circuit requires no off-chip components, making it suitable for application in wireless sensor networks (WSN). After a single-point calibration, the spread of its output frequency is less than 1.1% (3sigma) over the temperature range from -22degC to 85degC . Fabricated in a baseline 65 nm CMOS technology, the frequency reference circuit occupies 0.11 mm² and draws 34 muA from a 1.2 V supply at room temperature.

Keywords

CMOS integrated circuits; MOSFET; wireless sensor networks; CMOS technology; MOS transistor; crystal-less ULP radios; current 34 muA; electron mobility; frequency 100 kHz; low-voltage low-power circuit; low-voltage mobility-based frequency reference; size 65 nm; temperature -22 degC to 85 degC; temperature 293 K to 298 K; voltage 1.2 V; wireless sensor networks; CMOS technology; Circuits; Electron mobility; Energy consumption; Frequency synchronization; MOSFETs; Oscillators; Silicon; Temperature sensors; Wireless sensor networks; CMOS analog integrated circuits; Charge carrier mobility; crystal-less clock; low voltage; relaxation oscillators; ultra-low power; wireless sensor networks;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2009.2020247

Filename

5109783