Title :
Thermal stability of heterojunction interfaces in GaAs/AlGaAs structures
Author :
Morgan, D.V. ; Christou, Alex
Author_Institution :
Wales Univ., Cardiff
fDate :
12/8/1988 12:00:00 AM
Abstract :
Reports on the preliminary study of the stability of GaAs/AlGaAs interfaces under thermal stressing up to 1000°C in an optical furnace. The interfaces are studied using RBS and SIMS techniques and they confirm that no observable degradation occurs up to 900°C. At 1000°C diffusion of aluminium from the AlGaAs layer into the GaAs occurs but this is at a very low level
Keywords :
III-V semiconductors; Rutherford backscattering; aluminium compounds; diffusion in solids; gallium arsenide; p-n heterojunctions; secondary ion mass spectroscopy; 1000 degC; RBS; SIMS; diffusion; heterojunction interfaces; optical furnace; thermal stressing;
Journal_Title :
Electronics Letters
