Title :
A 2.5-mW SOS CMOS optical receiver for chip-to-chip interconnect
Author :
Apsel, Alyssa ; Fu, Zhongtao ; Andreou, Andreas G.
Author_Institution :
Cornell Univ., Ithaca, NY, USA
Abstract :
This paper reports on the design of a differential optical receiver in silicon-on-sapphire (SOS) complementary metal-oxide-semiconductor (CMOS). The low-power characteristics (2.5 mW) and small footprint make it a good candidate for two-dimensional optoelectronic interchip interconnects where the transparency of the substrate facilitates system integration and packaging. A differential transimpedance amplifier (TIA) with positive feedback at the front end extends the bandwidth of traditional differential TIAs when the capacitance of the photodetector is smaller than the capacitance of the gates in the differential pair. The full receiver tested in the 0.5-μm ultrathin silicon (UTSi) SOS-CMOS Peregrine process consumes 2.5 mW when operated at or near gigabit rates, with bit-error rates of better than 10-12 taken at 750 Mb/s.
Keywords :
CMOS integrated circuits; differential amplifiers; error statistics; integrated optoelectronics; low-power electronics; optical interconnections; optical receivers; packaging; photodetectors; sapphire; silicon-on-insulator; 0.5 μm ultrathin silicon; 0.5 mum; SOS CMOS optical receiver; Si-Al2O3; bit-error rates; chip-to-chip interconnect; differential optical receiver; differential transimpedance amplifier; packaging; photodetector; silicon-on-sapphire complementary metal-oxide-semiconductor; substrate transparency; system integration; two-dimensional optoelectronic interchip interconnects; Bandwidth; Capacitance; Differential amplifiers; Optical amplifiers; Optical design; Optical feedback; Optical receivers; Packaging; Photodetectors; Testing; CMOS; Chip-to-chip; SOS; complementary metal–oxide–semiconductor; optical interconnect; receiver; silicon-on-sapphire;
Journal_Title :
Lightwave Technology, Journal of
DOI :
10.1109/JLT.2004.833263
